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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4793 DESCRIPTION With TO-220F package Complement to type 2SA1837 High transition frequency APPLICATIONS Power amplifier applications Driver stage amplifier applications PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-220F) and symbol DESCRIPTION Absolute maximum ratings (Ta=25ae ) SYMBOL VCBO VCEO VEBO IC IB PARAMETER TOR NDU ICO E SEM ANG INCH CONDITIONS VALUE 230 Collector-base voltage Open emitter Collector-emitter voltage Open base 230 5 Emitter-base voltage Open collector Collector current Base current TC=25ae 1 0.1 20 Collector dissipation Ta=25ae 2.0 150 -55~150 UNIT V V V A A PC W Tj Tstg Junction temperature Storage temperature ae ae Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter voltage Collector cut-off current Emitter cut-off current DC current gain Output capacitance Transition frequency CONDITIONS IC=10mA ; IB=0 IC=0.5A IB=50mA IC=0.5A ; VCE=5V VCB=230V; IE=0 VEB=5V; IC=0 IC=0.1A ; VCE=5V IE=0; VCB=10V;f=1MHz IC=0.1A ; VCE=10V 100 20 100 MIN 230 2SC4793 SYMBOL V(BR)CEO VCEsat VBE ICBO IEBO hFE COB fT TYP. MAX UNIT V 1.5 1.0 1.0 1.0 320 |I |I V V A A pF MHz TOR NDU ICO E SEM ANG INCH 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC4793 TOR NDU ICO E SEM ANG INCH Fig.2 Outline dimensions 3 Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4793 TOR NDU ICO E SEM ANG INCH 4 |
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